| PART |
Description |
Maker |
| PD21120R6 |
120 Watts, 2110-2170 MHz PD21120R6 PUSH/PULL LATERAL MOSFET
120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET
|
TRIQUINT SEMICONDUCTOR INC
|
| MRF21180 |
MRF21180, MRF21180S 2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| PTF102003 |
120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET
|
PEAK electronics GmbH
|
| MRF5P21180 MRF5P21180R6 |
MRF5P21180 2170 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
|
| MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF21180R6 MRF21180 |
2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor
|
Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| SI-5R2.140G-T |
2110 MHz - 2170 MHz RF/MICROWAVE ISOLATOR
|
HITACHI METALS LTD
|
| NE1101-00 |
2110 MHz - 2170 MHz RF/MICROWAVE ISOLATOR
|
Rakon France SAS
|
| PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
